Method of producing a dielectric of two-layer construction

Details Method of producing a dielectric of two-layer construction Method of producing a dielectric of two-layer construction

1977-12-01

1980-11-25

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG67, 156DIG79, C30B 1904

Patent

active

042356636

ABSTRACT:
A thin (less than 500.mu.m) epitaxial dielectric layer having low photoconductivity is grown on a monocrystalline wafer composed of Bi.sub.12 GeO.sub.20 by a liquid-phase epitaxial growth technique. The composition of the liquid melt from which the dielectric layer is grown is composed of a pseudo-three-component system defined by the formula:

REFERENCES:
patent: 4092208 (1978-05-01), Brice et al.
Translation of Japanese Unexamined Patent Application No. 50-130466+Application.
Journal of Applied Physics vol. 36, No. 2, 1965, Nitsche.
Translation (Supplied by Applicant) of Japanese Unexamined Patent Application No. 50-130466+Application.
Journal of Applied Physics vol. 36, No. 8, Aug. 1965, Nitsche.

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