Semiconductor memory device and method of operation thereof

Details Semiconductor memory device and method of operation thereof Semiconductor memory device and method of operation thereof

1997-01-28

1999-08-10

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361322, 365149, 257295, H01G 406

Patent

active

059368322

ABSTRACT:
A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.

REFERENCES:
patent: 4437139 (1984-03-01), Howard
patent: 4772985 (1988-09-01), Yasumoto et al.
patent: 4807085 (1989-02-01), Yasukawa et al.

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