Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-03-20
1999-02-02
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257748, 257763, 257770, H01L 2348, H01L 2352
Patent
active
058669477
ABSTRACT:
A process has been developed in which an aluminum based, interconnect structure overlies a tungsten plug structure, in a small diameter contact hole. The tungsten plug is formed via RIE removal of unwanted tungsten, from areas other then the contact hole using a halogen containing etchant, and using a RIE overetch cycle that creates an unwanted crevice in the center of the tungsten plug. A post RIE anneal, in a nitrogen ambient removes moisture from surrounding dielectric layers and also forms a protective, nitrogen containing tungsten layer, filling the crevice in the tungsten plug. The filling of the crevice allows a planar overlying aluminum based, interconnect structure to be obtained.
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Hsu Shun-Liang
Wang Jyh-Haur
Ackerman Stephen B.
Eckert II George C.
Jackson, Jr. Jerome
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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