Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-08-23

1999-02-02

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 52, 257756, H01L 29788

Patent

active

058669302

ABSTRACT:
A semiconductor device comprises a first conducting layer, a first insulating layer formed on the first conducting layer, a second conducting layer formed on the first insulating layer and facing the first conducting layer, wherein, at least part of a peripheral portion of the region of at least one of the first and second conducting layers, in contact with the first insulating layer, includes an amorphous conducting layer made of a semiconductor, and the amorphous conducting layer contains at least one element selected from the group consisting of oxygen, nitrogen, carbon, argon, chlorine, and fluorine and a total concentration of the at least one element falls within the range from 0.1 atomic % to 20 atomic %.

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E.F. Kennedy, et al. "Influence of .sup.16 O, .sup.12 C, .sup.14 N, and Noble Gases on the Crystallization of Amorphous Si Layers", Journal of Applied Physics, vol. 48, No. 10, (pp. 4241-4246), Oct. 1977.

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