Semiconductor device having a lateral insulated gate biopolar tr

Details Semiconductor device having a lateral insulated gate biopolar tr Semiconductor device having a lateral insulated gate biopolar tr

1996-03-22

1998-08-18

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257141, 257162, H01L 2976, H01L 2974, H01L 31111

Patent

active

057961468

ABSTRACT:
An LIGBT includes an LDMOST structure in which the drain/anode 9, 13 is provided with a pn junction which injects charge carriers into the drift region 8. To prevent latch-up, the base region 6 of the LDMOST is provided with deep zones 6b of the same conductivity type as the base region which extend locally comparatively far into the drift region. These zones collect charge carriers injected by the anode into the drift region and form a low-ohmic connection to the source contact 11 for these charge carriers. Since these zones are provided locally only, the threshold voltage of the LDMOST is not or at least substantially not influenced by the deep zones. In a modification, a ballast series resistance is provided in the source zone, so that latch-up is counteracted also at high temperatures.

REFERENCES:
"Lateral Insulated Gate Transistors With Improved Latching Characteristics", by A.L. Robinson et al, IEDM Tech. Dig. pp. 744-747, 1985.

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