Semiconductor device composed of MOSFET having threshold voltage

Details Semiconductor device composed of MOSFET having threshold voltage Semiconductor device composed of MOSFET having threshold voltage

1997-04-21

1998-08-18

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257338, 257339, 257344, 257408, 257409, H01L 2976

Patent

active

057961450

ABSTRACT:
A semiconductor device includes a MOSFET which has a source and drain region of a first conductivity type, and an ion implanted channel section, and a pair of threshold control sections having a second conductivity type, one being disposed in a substrate surface between the channel section and the source region and the other being disposed in the substrate surface between the channel section and the drain region, and each of the threshold control sections having an impurity concentration so high that a threshold voltage of the MOSFET can be controlled. The threshold voltage of the MOSFET is not determined by the impurity concentration in the ion implanted channel section but is determined by the impurity concentration in the threshold voltage control sections. This enables the adequate control of the threshold voltage of the MOSFET that is part of a MOS integrated circuit and the simplification of the manufacturing method of the MOS integrated circuit.

REFERENCES:
patent: Re32800 (1988-12-01), Han et al.
patent: 4376947 (1983-03-01), Chiu et al.
patent: 5158903 (1992-10-01), Hori et al.
patent: 5170232 (1992-12-01), Narita
patent: 5401994 (1995-03-01), Adan

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