Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-11-29
1998-08-18
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257309, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
057961387
ABSTRACT:
A semiconductor memory device has a substrate with a transfer transistor formed thereon. The transfer transistor has drain and source regions with one of the source/drain regions electrically coupled to a charge storage capacitor. The charge storage capacitor includes a trunk-like conducting layer, at least one branch-like conducting layer, a dielectric layer and an upper conducting layer. The trunk-like conducting layer includes a lower trunk section, a middle trunk section and an upper trunk section. One end of the branch-like conducting layer is connected to an internal surface of the trunk-like conducting layer. The branch-like conducting layer together with the trunk-like conducting layer form the storage electrode of the charge storage capacitor. The upper conducting layer serves as an opposing electrode of the charge storage capacitor.
REFERENCES:
patent: 5071783 (1991-12-01), Taguchi et al.
patent: 5077688 (1991-12-01), Kumanoya et al.
patent: 5089869 (1992-02-01), Matsuo et al.
patent: 5102820 (1992-04-01), Chiba
patent: 5126810 (1992-06-01), Gotou
patent: 5142639 (1992-08-01), Kohyama et al.
patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5158905 (1992-10-01), Ahn
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5172201 (1992-12-01), Suizu
patent: 5196365 (1993-03-01), Gotou
patent: 5206787 (1993-04-01), Fujioka
patent: 5266512 (1993-11-01), Kirsch
patent: 5274258 (1993-12-01), Ahn
patent: 5338955 (1994-08-01), Tamura et al.
patent: 5354704 (1994-10-01), Yang et al.
patent: 5371701 (1994-12-01), Lee et al.
patent: 5389568 (1995-02-01), Yun
patent: 5399518 (1995-03-01), Sim et al.
patent: 5438011 (1995-08-01), Blalock et al.
patent: 5443993 (1995-08-01), Park et al.
patent: 5453633 (1995-09-01), Yun
patent: 5460996 (1995-10-01), Ryou
patent: 5478768 (1995-12-01), Iwasa
patent: 5478770 (1995-12-01), Kim
patent: 5482886 (1996-01-01), Park et al.
patent: 5508222 (1996-04-01), Sakao
patent: 5521419 (1996-05-01), Wakamiya et al.
patent: 5523542 (1996-06-01), Chen et al.
patent: 5543346 (1996-08-01), Keum et al.
patent: 5550080 (1996-08-01), Kim
patent: 5561309 (1996-10-01), Cho et al.
patent: 5561310 (1996-10-01), Woo et al.
patent: 5572053 (1996-11-01), Ema
patent: 5595931 (1997-01-01), Kim
"Mini-Trenches in Polysilicon For Dram Storage Capacitance Enhancement", IBM Technical Disclosure Bulletin, vol. 33, No. 9, Feb. 1991.
Ema et al., "3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS", International Electron Devices Meeting, pp. 592-595, Dec. 1988.
Wakamiya et al., "Novel Stacked Capacitor Cell for 64-Mb DRAM", 1989 Symposium on VLSI Technology Digest of Technical papers, pp. 69-70.
Fahmy Wael
United Microelectronics Corporation
Weiss Howard
LandOfFree
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