Fabrication of etched features

Details Fabrication of etched features Fabrication of etched features

1997-02-24

1999-08-10

Breneman, R. Bruce

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 24, 216 41, 216 60, 216 85, H01L 21302

Patent

active

059354518

ABSTRACT:
Disclosed is a method of fabricating electronic components on a semiconductor substrate by etching features in the substrate through a mask including apertures which are separated by a prescribed spacing. Etching is continued until the etched features merge into a single channel. This technique can be used to form channels having nonuniform shapes, or could be used to monitor the end point of an etching operation.

REFERENCES:
patent: 4682503 (1987-07-01), Higashi et al.
patent: 5149673 (1992-09-01), MacDonald et al.
patent: 5464509 (1995-11-01), Mlcak et al.
patent: 5526454 (1996-06-01), Mayer
patent: 5683546 (1997-11-01), Manaka
patent: 5700382 (1997-12-01), Splett
patent: 5719073 (1998-02-01), Shaw et al.
Comerford, L.D. "Etched silicon structure for aligning a photodiode and optical fiber" IBM Tech. Discl. Bull. 22 (7) 2935-2936, Dec. 1979.
Patent No. EP0635876A, issued in EPO on Jan. 25, 1995 to Dautartas et al. Translation: no.
Patent No. DE4332414A1, issued in Germany on Mar. 30, 1995 to Schmidt-Sodingen et al. Translation: no. Comments: Translation will follow.
Patent No. 0418423A1, issued in EPO on Mar. 27, 1991 to Dietrich et al. Translation: no. Comments: Translation will follow.

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