Electroless plating bath used for forming a wiring of a semicond

Details Electroless plating bath used for forming a wiring of a semicond Electroless plating bath used for forming a wiring of a semicond

1996-07-03

1998-08-18

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

106 123, 438675, H01L 2144

Patent

active

057958289

ABSTRACT:
A contact hole and a wiring groove are formed in an insulating layer formed on a semiconductor substrate. A silver layer is formed inside of the contact hole and the wiring groove and on the insulating layer with the use of an electroless plating bath comprising: silver nitrate containing silver ions; tartaric acid serving as a reducing agent of the silver ions; ethylenediamine serving as a complexing agent of the silver ions; and metallic ions of tetramethylammoniumhydroxide serving as a pH control agent. Then, the silver layer on the insulating layer is removed by a chemical and mechanical polishing method such that an embedded wiring is formed in each of the contact hole and the wiring groove.

REFERENCES:
patent: 4469784 (1984-09-01), Heki et al.
patent: 5565235 (1996-10-01), Baudrand et al.
patent: 5580668 (1996-12-01), Kellam

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