Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1995-05-26

1998-08-18

Niebling, John

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

438486, H01L 2120

Patent

active

057958165

ABSTRACT:
Method of fabricating a thin-film transistor. This transistor has a semiconductor such as a silicon semiconductor. This semiconductor is irradiated with pulsed laser light having a pulse width which is set greater than 1 .mu.s to maintain molten state of the silicon surface for a long time. As a result, a silicon film having high crystallinity can be obtained. This scheme can be used for crystallization of an amorphous silicon film and for activation effected after implantation of impurity ions.

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