Electrically programmable antifuse having a metal to metal struc

Details Electrically programmable antifuse having a metal to metal struc Electrically programmable antifuse having a metal to metal struc

1992-09-18

1995-02-07

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257528, 257529, 257758, 257774, H01L 2348, H01L 2946, H01L 2954, H03K 19177

Patent

active

053878124

ABSTRACT:
A metal-to metal antifuse device is provided in a double layer metal interconnect structure. A lower electrode comprises a first multilayer metal layer interconnect disposed on an insulator. An inter-metal dielectric is disposed on the first metal layer interconnect having an antifuse via. An antifuse material layer is disposed in the antifuse via and having an upper electrode comprising a second multilayer metal layer interconnect.

REFERENCES:
patent: 3634929 (1972-01-01), Yoshida et al.

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