Process for deposition and etching of copper in multi-layer stru

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156655, 156656, 156666, 427 99, 427585, 427252, 427253, 437187, 437203, 437228, H01L 2100

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053873157

ABSTRACT:
An integral process is provided for depositing onto, and etching a layer of copper from, a multi-layer structure. The subject process, which is conducted within a vacuum chamber, comprises providing a multi-layer having at least one major surface in which contact/vias are located. Next, a copper precursor is deposited onto at least one major surface of the multi-layer structure and into the contact/vias. The substrate temperature of the multi-layer structure in the vacuum chamber is maintained above the decomposition temperature of the copper precursor during the deposition thereof. In the etching phase of the integral process, an protective etch mask is provided on the major surface. Then, the substrate temperature of the multi-layer structure is lowered in the vacuum chamber below the decomposition temperature of the deposited copper precursor. Etching of the deposited copper film is then conducted employing an etchant material comprising the decomposition product of the copper precursor. Preferably, etching of the deposited copper film from at least one of the major surfaces of the multi-layer structure comprises a reverse chemical vapor deposition and etching process.

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H. K. Shin et al, in Mat. Res. Soc. Proc., vol. 204, p. 61 (1991) "Synthesis Of New Copper (I) Beta-Diketonate Compounds For CVD Of Copper".

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