Semiconductor device having metal silicide film

Details Semiconductor device having metal silicide film Semiconductor device having metal silicide film

1996-03-12

1997-08-19

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257384, H01L 2976, H01L 2994, H01L 31062

Patent

active

056591942

ABSTRACT:
A semiconductor device in which parasitic resistance of source/drain regions can be reduced than the parasitic resistance of the drain region, and manufacturing method thereof, can be obtained. In the semiconductor device, inactivating ions are implanted only to the source region of the semiconductor layer, so as to damage the crystal near the surface of the semiconductor layer, whereby siliciding reaction is promoted. Therefore, in the source region, a titanium silicide film which is thicker can be formed.

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