Thin film forming method and apparatus

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118723E, 118723ME, 118723MA, C23C 1600

Patent

active

056583893

ABSTRACT:
According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.

REFERENCES:
patent: 4440108 (1984-04-01), Little
patent: 4657774 (1987-04-01), Satou
patent: 4800100 (1989-01-01), Herbots
patent: 4861750 (1989-08-01), Nogawa
patent: 4888202 (1989-12-01), Murakami

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