Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1982-06-23
1984-10-30
Lacey, David
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156612, 156DIG73, 156DIG88, 148176, C30B 1306
Patent
active
044798466
ABSTRACT:
A process for entraining dislocations and other crystalline defects in a thin film includes coating a substrate, such as a layer of thermally grown silicon dioxide on a silicon wafer with the thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish the dislocation and other crystalline defects in the film entrained to follow the pattern of stripes at locations related to the stripes.
REFERENCES:
patent: 4071383 (1978-01-01), Nagata et al.
patent: 4168998 (1979-09-01), Hasegawa et al.
patent: 4211821 (1980-07-01), Hadni
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4332879 (1982-06-01), Pastor et al.
patent: 4333792 (1982-06-01), Smith
J. P. Colinge et al., Use of Selective Annealing for Growing Very Large Grain Silicon on Insulator Films, Appl. Phys. Lett. 41 (4), Aug. 15, 1982, pp. 346, 347.
J. P. Colinge et al., Selective Annealing of Silicon on Insulator Films, Abstract No. 147, CNET-BP 42, F-38240 Meylan, France, pp. 238, 239.
M. W. Geis et al., Zone-Melting Recrystallization of Encapsulated Silicon Films on SiO.sub.2 -Morphology and Crystallography, Appl. Phys. Lett. 40 (2), Jan. 15, 1982, pp. 158-160.
M. Geiss et al., Crystallographic Orientation of Silicon on an Amorphous Substrate using an Artifical Surface-Relief Grating and Laser Crystallization, Appl. Phys. Lett. 35 (1), Jul. 1, 1979, pp. 71-74.
Geis Michael W.
Smith Henry I.
Hieken Charles
Lacey David
Massachusetts Institute of Technology
Smith, Jr. Arthur A.
LandOfFree
Method of entraining dislocations and other crystalline defects does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of entraining dislocations and other crystalline defects , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of entraining dislocations and other crystalline defects will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1101192