Stable local interconnect/active area silicide structure for VLS

Details Stable local interconnect/active area silicide structure for VLS Stable local interconnect/active area silicide structure for VLS

1992-12-23

1994-11-15

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257767, 257764, 257770, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

053651111

ABSTRACT:
A local interconnect silicide structure (30) for connecting silicon regions (16) to silicon regions (20) separated by oxide regions (24) comprises a first portion of titanium silicide/titanium nitride/titanium silicide contacting the silicon regions and a second portion of titanium/titanium nitride/titanium silicide contacting the oxide regions. The silicide structure is also useful for connecting source/drain regions (14) and polysilicon interconnects (28). Two separate heating steps are employed, separated by an etch step to form the interconnects (34, 36). The first heating step forms (a) titanium silicides with single or polycrystalline silicon, using a first titanium layer (30a) at the bottom of the silicide structure and (b) titanium silicides with amorphous silicon (30d), using a second titanium layer (30c) on top of the titanium nitride layer (30b) on which the amorphous silicon is deposited and then patterned. The second heating step, which is at a higher temperature than the first, converts all the titanium silicides to titanium disilicide.

REFERENCES:
patent: 3381182 (1968-04-01), Thornton
patent: 4680612 (1987-07-01), Hieber et al.
patent: 4937652 (1990-06-01), Okumura et al.
patent: 4962414 (1990-10-01), Lion et al.
patent: 5049975 (1991-09-01), Ajika et al.

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