Semiconductor device having improved structure of multi-wiring l

Details Semiconductor device having improved structure of multi-wiring l Semiconductor device having improved structure of multi-wiring l

1985-05-03

1988-03-29

Edlow, Martin H.

357 71, H01L 2310, H01L 2348, H01L 2318

Patent

active

047347546

ABSTRACT:
A semiconductor device comprises a lower wiring layer, an intermediate insulating film on the lower wiring layer and an upper wiring layer crossing the lower wiring layer via the intermediate insulating film. At least one opening is provided in the intermediate insulating film in the vicinity of the upper wiring layer but separated from the upper wiring layer to expose a surface portion of the lower wiring layer. In such a structure, when an electrical current flows through the lower wiring layer with a high density, whiskers or hillocks from the lower wiring layer grow definitively only in the opening, and hardly glow from a portion of the lower wiring layer under the upper wiring layer. Therefore, unwanted short-circuiting between the lower and upper wiring layers can be prevented.

REFERENCES:
patent: 3735208 (1973-05-01), Roswell et al.
patent: 3890636 (1975-06-01), Harada et al.
patent: 4531144 (1985-07-01), Holmberg
patent: 4544941 (1985-10-01), Ariizumi et al.
patent: 4562455 (1985-12-01), Okumura et al.
patent: 4600624 (1986-07-01), Joseph et al.

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