Semiconductor device having crystalline defect isolation regions

Details Semiconductor device having crystalline defect isolation regions Semiconductor device having crystalline defect isolation regions

1994-06-16

1995-10-03

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257523, 257590, 257617, H01L 2932, H01L 29227

Patent

active

054554373

ABSTRACT:
The present invention is mainly characterized in that a semiconductor device having a well which is of the same conductivity type as that of a substrate and which is isolated from the substrate is improved not to cause interference between the well and the substrate even if a large amount of minority carriers are implanted. The semiconductor device is provided with a semiconductor substrate of the first conductivity type having the main surface. A first well of a first conductivity type is provided in the main surface of the semiconductor substrate. The first well, having side portions and a bottom portion, extends from the main surface. A second well of a second conductivity type is provided in the main surface of the semiconductor substrate so as to surround the side portions and the bottom portion of the first well. The bottom portion of the second well has a crystal defect region.

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