Post-titanium nitride mask ROM programming method and device man

Details Post-titanium nitride mask ROM programming method and device man Post-titanium nitride mask ROM programming method and device man

1995-11-16

1997-08-05

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257915, H01L 2994

Patent

active

056545762

ABSTRACT:
A method of manufacturing a code pattern on a semiconductor substrate with an array of substantially parallel buried bit lines integral therewith and with word lines above the buried bit lines, includes: forming a titanium nitride layer above the word lines, forming and patterning a code mask above the titanium nitride layer, implanting impurities into the substrate through openings in the code mask to form the code pattern, and performing rapid thermal annealing of the implant. The step height of the titanium nitride layer is employed to form the code identification on the substrate.

REFERENCES:
patent: 4200474 (1980-04-01), Morris
patent: 4290184 (1981-09-01), Kuo
patent: 4356042 (1982-10-01), Gedaly et al.
patent: 4536944 (1985-08-01), Bracco et al.
patent: 5063170 (1991-11-01), Okuyama
patent: 5275959 (1994-01-01), Kobayashi et al.
patent: 5378649 (1995-01-01), Huang

Affiliated with

Also associated with

Rating

Post-titanium nitride mask ROM programming method and device man does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Post-titanium nitride mask ROM programming method and device man, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Post-titanium nitride mask ROM programming method and device man will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1077011