Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1997-03-06

2000-09-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 257622, 438257, 438259, H01L 31119

Patent

active

06121664&

ABSTRACT:
A semiconductor memory device includes: a semiconductor substrate; a plurality of first transistors formed over the semiconductor substrate in a matrix configuration, each of the first transistors having a channel region; a plurality of second transistors formed over the semiconductor substrate in a matrix configuration, each of the second transistors having a channel region; and a plurality of word lines formed in parallel in a first direction, each of the word lines functioning as a word line and a gate electrode. At least two channel regions of the plurality of first transistors make contact in the first direction; and at least two channel regions of the plurality of second transistors make contact in a second direction.

REFERENCES:
patent: 4974042 (1990-11-01), Ashida et al.
patent: 5453392 (1995-09-01), Hong et al.
patent: 5578857 (1996-11-01), Hong et al.
patent: 5859460 (1999-01-01), Ju et al.

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