Semiconductor memory device with increased charge retention capa

Details Semiconductor memory device with increased charge retention capa Semiconductor memory device with increased charge retention capa

1997-10-29

2000-09-19

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257399, 257 68, H01L 27108, H01L 2976

Patent

active

06121650&

ABSTRACT:
A semiconductor device includes a gate electrode (4) formed of a conductive material on a semiconductor substrate (1) of one conductivity type with a gate insulating film (3) therebetween; first and second diffusion regions (5, 10) of another conductivity type formed on the semiconductor substrate (1) so as to sandwich the gate electrode (4); and a contact hole (17) for electrically connecting one (first) (10) of the first and second diffusion regions (5, 10) to a lower electrode (8) of a cell capacitor for storing charge therein, and has a characteristic that when a reverse voltage Vrev is applied as a junction application voltage between semiconductors of different conductivity types of the first diffusion region (10) and the semiconductor substrate (1) (positive potential is applied to the n-type semiconductor side and zero or negative potential, to the p-type semiconductor side), a leakage current Ileak flows between the first diffusion region (10) and the semiconductor substrate (1), and the junction application voltage Vrev when the leakage current Ileak is

REFERENCES:
patent: 5440165 (1995-08-01), Mitsunaga et al.
patent: 5932906 (1999-08-01), Shimizu

Affiliated with

Also associated with

Rating

Semiconductor memory device with increased charge retention capa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with increased charge retention capa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with increased charge retention capa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1075963