Film structure, electronic device, recording medium, and process

Details Film structure, electronic device, recording medium, and process Film structure, electronic device, recording medium, and process

1997-06-26

2000-09-19

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

06121647&

ABSTRACT:
In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8.ltoreq.(Pb+Rn)/Ti.ltoreq.1.3 and 0.5.ltoreq.Pb/(Pb+Rn).ltoreq.0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.

REFERENCES:
patent: 5308462 (1994-05-01), Iijima et al.
patent: 5440125 (1995-08-01), Hennins et al.
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 5567979 (1996-10-01), Nashimoto et al.
patent: 5578845 (1996-11-01), Masuda et al.
patent: 5719417 (1998-02-01), Roeder et al.
Takashi Nakamura, et al., The Institute of Electronics, Information and Communication Engineer, pp. 53-59, Nov. 1993, "Study of Ferroelectric Thin Films for Application to NDRO Nonvolatile Memories".
Hiroshi Maiwa, et al., Jpn. J. Phys., vol. 31, No. 9B, pp. 3029-3032, Sep. 1992, "Crystalline Stucture of PbTiO.sub.3 Thin Films by Multiple Cathode Sputtering".
Takashi Hase, et al., Jpn. J. Appl. Phys., vol. 33, No. 9B, pp. 5244-5248, Sep. 1994, "Preparation of Pb(Zr, Ti)O.sub.3 Thin Films by MultiTarget Sputtering".
Jiyoung Kim, et al., Mt. Res. Soc. Symp. Proc., vol. 310, pp. 473-478, 1993, "Ultra-Thin Sputtered Pilms for UlSI DRAMS".
The Japan Society of Applied Physics and Related Societies 30 p-T-3 (1993), 30a-ME-6 (1994), pp. 443 & 454 (with Extended Abstracts and Concise Explanations).
Y. Gao, et al., J. Mater. Res., vol. 8, No. 1, pp. 145-153, Jan. 1993, "Microstructure of PbTiO.sub.3 Thin Films Deposited on (001)MgO by MOCVD".
G.R. Bai, et al., J. Mater Res., vol. 9, No. 1, pp. 156-163, Jan. 1994, "The Relationship Between the MOCVD Paramaters and the Crystallinity, Epitaxy, and Domain Structure of PbTiO.sub.3 Films".
Kenji Iijima, et al., J. Appl. Phys., vol. 60, No. 1, pp. 361-367, Jul. 1986, "Preparation of c-Axis Oriented PbTiO.sub.3 Thin Films and Their Crystallographic, Dielectric, Pyroelectric Properties".
Kenji Iijima, et al., J. Appl. Phys., vol. 60, No. 8, pp. 2914-2919, Oct. 15, 1986, "Epitaxial Growth and the Crystallographic, Dielectric, and Pyroelectric Properties of Lanthanum-Modified Lead Titanate Thin Films".
Yukio Sakashita, et al., J. Appl. Phys., vol. 73, No. 11, pp. 7857-7863, Jun. 1, 1993, "Dependence of Electrical Properties on Film Thickness in PB(ZR.sub.x TI.sub.1 -.sub.x)O.sub.3 Thin Films Produced by Metalorganic Chemical Vapor Deposition".
B. Panda, et al., J. Appl. Phys., vol. 79, No. 2, pp. 1008-1012, Jan. 15, 1996, "Electron Beam Deposited Lead-Lanthanum-Ziconate-Titanate Then Films For Silicon Based Device Applications".
Satoshi Yamauachi, et al., J. Appl. Phys. vol. 35, pp. 1553-1556, 1996, "Growth if [11 ]--Oriented Lead Zirconate Titanate Thin Film Smooth Surface To Improve Electrical Properties".

Affiliated with

Also associated with

Rating

Film structure, electronic device, recording medium, and process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Film structure, electronic device, recording medium, and process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film structure, electronic device, recording medium, and process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1075937