Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-06-07
1997-08-05
Wilczewski, Mary
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438631, 438635, 438637, 438641, 438675, H01L 2144, H01L 2128, H01L 21283
Patent
active
056542372
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer, and forming an interconnection layer in an opening portion of the second insulating layer formed by patterning so as to be electrically connected to the conductive layer.
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Okano Haruo
Suguro Kyoichi
Kabushiki Kaisha Toshiba
Wilczewski Mary
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