Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1998-02-27

2000-01-04

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257317, 36518517, 36518528, H01L 2972

Patent

active

060112875

ABSTRACT:
In a NAND EEPROM using the local self-boosting system, an intermediate voltage which allows a memory cell adjacent to a selected memory cell to be turned on is applied to the control gate of the adjacent memory cell. As a result, even if the adjacent memory cell is in a normally-off state, the potential of a bit line can be transmitted to the adjacent memory cell. Thus, the reliability of the write inhibition in a non-selected NAND memory cell column is improved, while data can be written at random into a plurality of memory cells in a selected NAND memory cell column. When data is to be erased, an absolute value of an erasing voltage applied to a control gate can be less. As a result, data can be erased by a lower erasure voltage than that required in the conventional art. Consequently, the element refinement, the reliability and the yield can be further improved.

REFERENCES:
patent: 5508957 (1996-04-01), Momodomi et al.

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1074559