Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1994-10-19
1997-08-05
Fourson, George
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438659, 438385, H01L 2126
Patent
active
056542097
ABSTRACT:
A semiconductor device at least including a region which contains a first impurity constituted by a group V element and a second impurity constituted by an element of high electronegativity or a halogen element such as Ti, Cl, O, Br, S, I or N in amorphous silicon, polycrystalline silicon, single crystal silicon, a refractory metal such as Ti, Mo, W, Ta, Pt, Pd and Zr or a silicide of such refractory metal. The semiconductor device is manufactured by introducing the second impurity before, after or during introduction of the first impurity, for example, by ion implantation into amorphous, polycrystalline or single crystal silicon, a refractory metal, or a silicide thereof and then annealing to form an N-type impurity region.
REFERENCES:
patent: 4144100 (1979-03-01), MacIver et al.
patent: 4584026 (1986-04-01), Wu et al.
patent: 4682407 (1987-07-01), Wilson et al.
"Direct Evidence of Arsenic Clustering in High Dose Arsenic-Implanted Silicon", Appl. Phys. Lett., vol. 44, No. 8, Apr. 15, 1984, by N.R. Wu, D.K. Sadana, and J. Washburn.
Fourson George
Seiko Epson Corporation
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