Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-29
2000-09-19
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438592, 438660, 438682, H01L 214763
Patent
active
061211397
ABSTRACT:
A titanium based SALICIDE process that is free of bridging effects is described. A controlled quantity of nitrogen is delivered to the silicon oxide (or nitride) surface during titanium silicide formation. The amount of nitrogen is sufficient to inhibit outdiffusion of silicon at the dielectric areas, but insufficient to affect the sheet resistance of the silicon areas. This is accomplished by means of a titanium/titanium-rich titanium nitride/titanium sandwich that is formed in a single sputtering operation. An optional cap layer of stoichiometric titanium nitride may also be added.
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Chang Shou-Zen
Tsai Chaochieh
Ackerman Stephen B.
Ghyka Alexander G.
Niebling John F.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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