Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1998-08-07
2000-09-19
Smith, Matthew
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
438473, 438514, 257915, H01L 2120
Patent
active
061211206
ABSTRACT:
In a method for manufacturing a semiconductor device, an impurity diffusion region is formed within a semiconductor substrate. Then, a chemical dry etching process or a heating process is carried out to remove a contamination layer from the impurity diffusion region. Then, a silicon layer is selectively grown on the impurity diffusion region.
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Tatsumi Toru
Wakabayashi Hitoshi
Lee Granvill
NEC Corporation
Smith Matthew
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