Plasma etching methods

Details Plasma etching methods Plasma etching methods

1998-05-22

2000-01-04

Gupta, Yogendra

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, 438725, 438905, 134 11, 134 12, H01L 21302

Patent

active

06010967&

ABSTRACT:
In but one aspect of the invention, a plasma etching method includes forming polymer material over at least some internal surfaces of a dual powered plasma etch chamber while first plasma etching an outer surface of a semiconductor wafer received by a wafer holder within the chamber. After the first plasma etching, second plasma etching is conducted of polymer material from the chamber internal surfaces while providing a bias power at the wafer holder effective to produce an ac peak voltage at the wafer surface of greater than zero and less than 200 Volts. In one implementation, second plasma etching is conducted of polymer material from the chamber internal surfaces while providing a bias power at the wafer holder of greater than zero Watts and less or equal to about 1 Watt/cm.sup.2 of wafer surface area on one side. In one implementation, second plasma etching is conducted of polymer material from the chamber internal surfaces with the wafer in the chamber while providing a bias power ratio of top to bottom power of at least about 10:1. In one implementation, plasma etching is conducted of polymer material from the chamber internal surfaces under conditions producing a greater etch rate of wafer outermost surfaces than an etch rate of the feature sidewall surfaces. In one implementation, plasma etching is conducted of polymer material from the chamber internal surfaces under conditions which also etch wafer outermost surfaces selectively relative to the feature sidewall surfaces.

REFERENCES:
patent: 4222838 (1980-09-01), Bhagat et al.
patent: 4529474 (1985-07-01), Fujiyama et al.
patent: 5129994 (1992-07-01), Ebbing et al.
patent: 5298466 (1994-03-01), Brasseur
patent: 5405491 (1995-04-01), Shahvandi et al.
patent: 5585012 (1996-12-01), Wu et al.
patent: 5780359 (1998-07-01), Brown et al.
patent: 5814155 (1998-11-01), Solis et al.
patent: 5817534 (1998-10-01), Ye et al.
patent: 5824607 (1998-10-01), Trow et al.
patent: 5869401 (1999-02-01), Brunemeier et al.
patent: 5882414 (1999-03-01), Fong et al.
patent: 5904778 (1999-05-01), Lu et al.
patent: 5920796 (1999-07-01), Wang et al.
Product Bulletin, "TCP.sup..TM. 9100 High-Density Oxide Etch System Productivity Solution For Advanced Oxide Etch", LAM Research Corporation, Fremont, CA 9 pages (undated).

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