Coating apparatus – Gas or vapor deposition
Patent
1995-03-10
1997-08-05
Bueker, Richard
Coating apparatus
Gas or vapor deposition
20429807, 2391323, 118666, 118667, 118688, 118724, C23C 1600
Patent
active
056538065
ABSTRACT:
An apparatus for dispersingly delivering a vapor-phase source reagent material containing a deposition species, to a substrate for deposition of such species thereon. The apparatus includes a disperser housing having a front wall with an array of discharge openings therein for discharging vapor-phase source reagent material from the housing interior volume onto a wafer or other substrate article mounted in vapor-receiving relationship to the disperser housing front wall. The front wall includes interior heat transfer passages arranged in a manifolded conformation for highly efficient temperature stabilization of the vapor discharged from the housing discharge openings, to produce highly uniform thickness deposited films on the substrate.
REFERENCES:
patent: 3098763 (1963-07-01), Deal
patent: 3578495 (1971-05-01), Pammer et al.
patent: 4313783 (1982-02-01), Davies
patent: 4798165 (1989-01-01), DeBoer et al.
patent: 4807562 (1989-02-01), Sandys
patent: 4820371 (1989-04-01), Rose
patent: 4825809 (1989-05-01), Mieno
patent: 4909914 (1990-03-01), Chiba et al.
patent: 4987856 (1991-01-01), Hey et al.
patent: 4989541 (1991-02-01), Mikoshiba et al.
patent: 4991541 (1991-02-01), Sugata et al.
patent: 4993358 (1991-02-01), Mahawili
patent: 5000113 (1991-03-01), Wang
patent: 5105761 (1992-04-01), Charlet et al.
patent: 5106453 (1992-04-01), Benko et al.
patent: 5134963 (1992-08-01), Barbee et al.
patent: 5174825 (1992-12-01), White, Jr. et al.
patent: 5186756 (1993-02-01), Benko
patent: 5268034 (1993-12-01), Vukelic
patent: 5273588 (1993-12-01), Foster et al.
patent: 5286519 (1994-02-01), Vukelic
patent: 5387289 (1995-02-01), Schmitz
patent: 5422139 (1995-06-01), Fischer
patent: 5462014 (1995-10-01), Awaya
"Growth of Al Films by Gas Temperature-Controlled Chemical Vapor Deposition." Tsukasa Kobayashi et al., J. Vac. Sci Technol. A 10(3) May/Jun. '92.
"Modeling and Experimental Studies of a Reactive Ion Etcher Using SF.sub.6 /O.sub.2 Chemistry" Peter M. Kopalidis & Jacob Jorne J. Electrochem. Soc. vol. 140 No. 10 Oct. 1993.
"A Mathematical Representation of a Modified Stagnation Flow Reactor for MOCVD Applications." A.H. Dilawari and J. Szekely Journal of Crystal Growth 108 (1991).
Advanced Technology & Materials Inc.
Bueker Richard
Elliott Janet R.
Hultquist Steven J.
Lund Jeffrie R.
LandOfFree
Showerhead-type discharge assembly for delivery of source reagen does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Showerhead-type discharge assembly for delivery of source reagen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Showerhead-type discharge assembly for delivery of source reagen will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1071872