III-V semiconductor device with OHMIC contact to high resistivit

Details III-V semiconductor device with OHMIC contact to high resistivit III-V semiconductor device with OHMIC contact to high resistivit

1974-05-17

1976-10-19

James, Andrew J.

357 67, 357 68, H01L 2348, H01L 2340

Patent

active

039874800

ABSTRACT:
The invention relates to a semiconductor device having a weakly doped region which comprises an ohmic contact.
According to the invention the ohmic contact comprises two elements of which one causes in the semi-conductor body the same conductivity type as that of the region on which said contact is present.

REFERENCES:
patent: 3716407 (1973-02-01), Kahn
patent: 3753804 (1973-08-01), Tijburg et al.
patent: 3767482 (1973-10-01), Kock et al.
patent: 3780427 (1973-12-01), Jenkins et al.
patent: 3794883 (1974-02-01), Bylander et al.
patent: 3818377 (1974-06-01), Yamashita et al.

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