Power transistor having vertical FETs and method for making same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257334, 257401, H01L 2976, H01L 2978

Patent

active

060607467

ABSTRACT:
A power transistor having of a plurality of vertical MOSFET devices combined in parallel to achieve high-performance operation and methods of fabricating this device.

REFERENCES:
patent: 5208172 (1993-05-01), Fitch et al.
patent: 5293053 (1994-03-01), Malhi et al.
patent: 5489787 (1996-02-01), Amaratunga et al.
patent: 5504359 (1996-04-01), Rodder
patent: 5581100 (1996-12-01), Ajit

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