Semiconductor device having SOI structure

Details Semiconductor device having SOI structure Semiconductor device having SOI structure

1995-10-23

2000-05-09

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257296, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060607386

ABSTRACT:
In etching a polysilicon layer above a gate electrode layer, a portion of the gate electrode layer is left thereunder. The etching process of that polysilicon layer and that gate electrode layer is carried out in two steps of etching the polysilicon layer and an interlayer insulating layer, and etching the gate electrode layer and the gate oxide film. Therefore, the amount that is removed from an SOI layer can be suppressed in the manufacturing process thereof.

REFERENCES:
patent: 4621276 (1986-11-01), Malhi
patent: 4677735 (1987-07-01), Malhi
patent: 4896197 (1990-01-01), Mashiko
patent: 4922312 (1990-05-01), Coleman et al.
patent: 5125007 (1992-06-01), Yamaguchi et al.
patent: 5359216 (1994-10-01), Coleman et al.
patent: 5381365 (1995-01-01), Ajika et al.
patent: 5442211 (1995-08-01), Kita
patent: 5453633 (1995-09-01), Yun
patent: 5565372 (1996-10-01), Kim

Affiliated with

Also associated with

Rating

Semiconductor device having SOI structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having SOI structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having SOI structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1067478