Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-04
2000-05-09
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, H01L 2978, H01L 3300
Patent
active
060607351
ABSTRACT:
A thin film dielectric device is disclosed, that comprises a substrate, a lower electrode formed on the substrate and composed of a laminate film having columnar grains that have grown in a vertical to a surface of the substrate, a dielectric thin film formed on the lower electrode and composed of a perovskite oxide, the dielectric thin film being a polycrystalline film having columnar grains that have successively grown from the columnar grains of the lower electrode and that takes over a crystal orientation of the lower electrode, the lattice constant of the lower electrode being matched with the lattice constant of the dielectric thin film at the interface therebetween with the columnar grains, and an upper electrode formed on the dielectric thin film. The lattice matching of the columnar grains solves problems of the increase of the leak current of the thin film dielectric device and the degradation of the dielectric breakdown resistance. In addition, the polycrystalline film having the columnar grains that succeed at the interface of the electrode/dielectric thin film can be properly formed on the semiconductor substrate such as Si substrate. Thus, the thin film dielectric device according to the present invention can be applied to a real LSI circuit and so forth.
Abe Kazuhide
Fukushima Noburu
Izuha Mitsuaki
Kabushiki Kaisha Toshiba
Meier Stephen D.
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