Solid state image sensor and method for fabricating the same

Details Solid state image sensor and method for fabricating the same Solid state image sensor and method for fabricating the same

1999-06-24

2000-05-09

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257437, 257250, H01L 27148

Patent

active

060607327

ABSTRACT:
In a solid state image sensor comprising a plurality of photoelectric conversion regions and a plurality of transfer regions which are formed in a principal surface of a semiconductor substrate, and a plurality of transfer electrodes formed above the transfer regions, a first insulating film, an antireflection film and a second insulating film are formed in the named order on the photoelectric conversion regions. The antireflection film has a refractive index larger than that of the second insulating film but smaller than that of the semiconductor substrate. The stacked film composed of the first insulating film, the antireflection film and the second insulating film, is formed, in the transfer regions, to extend over the transfer electrode which is formed a third insulating film formed on the semiconductor substrate. Preferably, an opening is formed to penetrate through the antireflection film, at a position above the transfer electrode, and after the second insulating film is formed, a sintering is carried out in a hydrogen atmosphere.

REFERENCES:
patent: 5336919 (1994-08-01), Tpriyama
patent: 5929470 (1999-07-01), Harada et al.

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