Method for microwave plasma processing

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156345, 156646, 156638, 20419234, B44C 122

Patent

active

047055952

ABSTRACT:
Disclosed is a method for microwave plasma processing characterized by providing a plasma processing period of time having no radio-frequency voltage applied to the sample stage. Particularly, if the present invention is used for the shaping by etching of the conductive material layer provided on an underlying insulation material, effects such as shortening of processing time and improvement of etching accuracy can be obtained in the case that the radio-frequency voltage is applied only for the period of time for removing the surface oxide film of the portion to be etched, or in the case that the radio-frequency voltage is further applied until nearly the time to initiate over-etching, and, the latter case is also effective for making the side wall of the portion to be etched vertical.

REFERENCES:
patent: 4208240 (1980-06-01), Latos
patent: 4581100 (1986-04-01), Hatzakis et al.

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