Method of fabricating a two-phase charge coupled device

Details Method of fabricating a two-phase charge coupled device Method of fabricating a two-phase charge coupled device

1976-02-09

1979-04-10

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148187, 357 24, H01L 2126

Patent

active

041481321

ABSTRACT:
In a charge coupled device provided with a two-phase overlapping gate structure, charge flow directionality is built into the structure by forming an asymmetrical potential well beneath each gate electrode with a single offset mask. High packing density is achieved in an array of staggered bits and with each bit being designed to have a geometry of minimum size.

REFERENCES:
patent: 3760202 (1973-09-01), Konsonocky
patent: 3789267 (1974-01-01), Krambeck et al.
patent: 3795847 (1974-03-01), Engeler et al.
patent: 3819959 (1974-06-01), Chang et al.
patent: 3865652 (1975-02-01), Agusta et al.
patent: 3918997 (1975-11-01), Mohsen et al.
Bower et al., "A High Density Overlapping Gate Charge Coupled Device Array", Technical Digest, 1973 Internat. Electron Devices Meeting, Dec. 3, 1973, pp. 30-32.

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