Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-21
2000-05-09
Booth, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438631, 438632, 438637, 438645, 438646, 438660, 438661, 438672, 438675, 438937, H01L 214763
Patent
active
060603860
ABSTRACT:
The present invention is a method and apparatus for filling voids in a substrate with a desired material to form conductive components and/or other features on the substrate. In one embodiment in accordance with the principles of the present invention, a substrate with voids is covered with a first layer of material and then a second layer of material is formed on top of the first layer. The first layer is deformable at a deformation temperature, while the second layer has a higher yield strength than the first layer and is substantially non-deformable at the deformation temperature. The second layer, for example, may be a rigid and/or substantially incompressible layer that distributes a driving force to the first layer. The second layer is then pressed against the first layer at a temperature equal to or greater than the deformation temperature to drive portions of the first layer into the voids in the substrate. The portion of the first layer in the voids may accordingly be used to form features of a device.
REFERENCES:
patent: 5308792 (1994-05-01), Okabayashi et al.
patent: 5434107 (1995-07-01), Paranjpe
patent: 5547902 (1996-08-01), Rohner
patent: 5668055 (1997-09-01), Xu et al.
Booth Richard
Micro)n Technology, Inc.
Zarneke David A.
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