Method of forming dual damascene structure

Details Method of forming dual damascene structure Method of forming dual damascene structure

1998-07-28

2000-05-09

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438651, 438653, H01L 214763

Patent

active

060603798

ABSTRACT:
A method of forming a dual damascene structure comprises the steps of providing a substrate having a first conductive layer formed thereon, and then sequentially forming a first dielectric layer, an anti-reflection layer and a second dielectric layer over the substrate. Next, the first dielectric layer, the anti-reflection layer and the second dielectric layer are patterned to form a first opening that exposes the conductive layer. Thereafter, the second dielectric layer is patterned to form a trench (or second opening) in a position above the first conductive layer. The trench and the first opening together form an opening of the dual damascene structure. Finally, a second conductive material is deposited into the opening and the trench to form conductive lines and the dual damascene structures.

REFERENCES:
patent: 5602053 (1997-02-01), Zheng et al.
patent: 5933761 (1998-07-01), Lee

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