Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-11-19
2000-05-09
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, 438614, 438615, 438616, 438617, 438665, 438666, 438669, 438672, H01L 2144
Patent
active
06060378&
ABSTRACT:
Improved bonding pads in an integrated circuit are provided, each having a first bonding pad layer comprising a portion of a top metal layer, and a top bonding pad layer comprising a remaining portion of a deposited bonding pad metal fill layer. The thickness of the bonding pad is greater than the thickness of the top metal layer. The composition of the top bonding pad layer may be different from the top metal layer, so that the composition of each may be independently optimized. A method for forming the improved bonding pads includes deposition of a bonding pad metal fill layer to fill openings in a passivation layer over the first bonding pad layers, and removal of the bonding pad metal fill layer over the passivation layer. An alternative method removes the bonding pad metal fill layer only at areas immediately surrounding locations of the bonding pads, leaving top bonding pad layer and a metal radiation shield layer. Intermediate layers may be employed to improve resistivity or other characteristics of the bonding pads.
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Bowers Charles
Micro)n Technology, Inc.
Zarneke David A.
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