Method of reducing particle contamination during sputtering

Details Method of reducing particle contamination during sputtering Method of reducing particle contamination during sputtering

1995-03-06

2000-05-09

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2041923, 20429806, 20429811, C23C 1434

Patent

active

060599383

ABSTRACT:
Method is described of reducing particle contamination during sputtering and sputtering device for the implementation of such a method.
A method of providing a layer on a substrate (1), whereby, during a certain process time, material (8) is detached from a target plate (6) through a bombardment of this target plate with ions from a gas discharge (4) under reduced pressure in a reactor chamber (2) which is provided with a support (7) for the substrate (1). Measures are taken to ensure that material deposited on a surface of chamber component (9) near the support (7) has a better adhesion. According to the invention, the measure for achieving a better adhesion of the material consists in that the surface of the chamber component (9) is first bombarded with ions from the gas discharge (4) for at least part of the process time. Material (8) detached from the target plate (6) and hitting the chamber component (9) will have a good adhesion thanks to the ion bombardment, so that no loose particles from the surface of the chamber component (9) can contaminate the layer on the substrate (1).

REFERENCES:
patent: 3677924 (1972-07-01), Cash et al.
patent: 3699034 (1972-10-01), Lins et al.
patent: 3864239 (1975-02-01), Fletcher et al.
patent: 4811359 (1989-04-01), Jones et al.
patent: 5006192 (1991-04-01), Deguchi
A. Stern, "Reducing . . . Films", IBM Technical Dis. Bulletin, vol. 12, No. 1, Jun. 1969.

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