Strained Si/SiGe layers on insulator

Details Strained Si/SiGe layers on insulator Strained Si/SiGe layers on insulator

1999-05-13

2000-05-09

Powell, William

Metal treatment

Barrier layer stock material, p-n type

With contiguous layer doped to degeneracy

148 334, 148 335, 257 19, 257190, H01L 2900

Patent

active

060598956

ABSTRACT:
An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or S.sub.i O.sub.2 over the strained layers, bonding a second substrate having an insulating layer on its upper surface to the top surface above the strained layers, and removing the first substrate. The invention overcomes the problem of forming strained Si and SiGe layers on insulating substrates.

REFERENCES:
patent: 4704785 (1987-11-01), Curran
patent: 5462883 (1995-10-01), Dennard et al.
patent: 5534713 (1996-07-01), Ismail et al.
patent: 5630905 (1997-05-01), Lynch et al.
patent: 5659187 (1997-08-01), Legoues et al.

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