Method of effecting nitrogen doping in Czochralski grown silicon

Details Method of effecting nitrogen doping in Czochralski grown silicon Method of effecting nitrogen doping in Czochralski grown silicon

1999-01-11

2000-05-09

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 19, 117 21, 117 36, C30B 1500

Patent

active

060598751

ABSTRACT:
A method of introducing nitrogen into a melt for use in producing a nitrogen-doped silicon single crystal by the Czochralski method includes adding a silicon material to a vessel, such as a quartz crucible, adding a nitrogen-containing powder, preferably silicon nitride powder, to the vessel, and heating the vessel for a time sufficient to melt the silicon material and to dissolve the nitrogen-containing in the silicon material in order to form the melt. A nitrogen-doped silicon single crystal is then produced from the melt by the Czochralski method by pulling the silicon single crystal from the melt with a seed crystal.

REFERENCES:
patent: 4090851 (1978-05-01), Berkman et al.
patent: 4400232 (1983-08-01), Ownby et al.
patent: 4415401 (1983-11-01), Wald et al.
patent: 4443411 (1984-04-01), Kalejs
patent: 4591409 (1986-05-01), Ziem et al.
Askeland, The Science and Engineering of Materials, 2nd Ed., PWS-Kent, pp. 483-484, 500, 1989.
Xiwen Zhang et al., "Effect of Iron on Oxygen Precipitation in Nitrogen-Doped Czochralski Silicon", Journal of Applied Physics, vol. 84, No. 10, Nov. 15, 1998, pp. 5502-5505.
Huanming Lu et al., "Thermal Warpage of Czochralski Silicon Wafers Grown Under a Nitrogen Ambience", Phys. Stat. Sol. (a) 169,1998, pp. 193-198.
D. Graf et al., "Characterization of Crystal Quality by Delineation of COP and the Impact on the Silicon Wafer Surface", The Electrochemical Society, Oct. 1996, 16 pages.
Koji Sumino et al., "Effects of Nitrogen on Dislocation Behavior and Mechanical Strength in Silicon Crystals", Journal of Applied Physics, vol. 54, No. 9, Sep. 1983, pp. 5016-5020.
C. S. Chen et al., "Crystal", Journal of Applied Physics, vol. 76, No. 6, Sep. 15, 1994, pp. 3347-3351.
T. Abe et al., "The Characteristics of Nitrogen in Silicon Crystals", VLSI Science and Technology, 1985, pp. 543-549.
Herman J. Stein, "Nitrogen in Crystalline Si", Materials Research Society Symp. Proc., vol. 59, 1986, pp. 523-535.
F. Shimura et al., "Nitrogen Effect on Oxygen Precipitation in Czochralski Silicon", Appl. Phys. Lett., vol. 48, No. 3, Jan. 20, 1986, pp. 224-226.

Affiliated with

Also associated with

Rating

Method of effecting nitrogen doping in Czochralski grown silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of effecting nitrogen doping in Czochralski grown silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of effecting nitrogen doping in Czochralski grown silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1060569