Semiconductor device having internal wire and method of fabricat

Details Semiconductor device having internal wire and method of fabricat Semiconductor device having internal wire and method of fabricat

1994-11-14

1996-08-27

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257770, 257774, H01L 2348, H01L 2352, H01L 2940

Patent

active

055504094

ABSTRACT:
In order to obtain a semiconductor device having an internal wire of low resistance, a conductive layer whose surface is silicified is provided in a surface of a semiconductor substrate. A conductor whose surface is silicified is provided on the semiconductor substrate in proximity to the conductive layer. This semiconductor device is provided with an internal wiring layer, which is formed by a titanium film and a titanium silicide layer for electrically connecting the surface of the conductive layer and a surface of an end of the conductor with each other, to cover a side wall surface and a bottom surface of a contact hole.

REFERENCES:
patent: 4910578 (1990-03-01), Okamoto
patent: 5012320 (1991-04-01), Yamazaki
patent: 5360996 (1994-11-01), Nulman et al.
patent: 5369300 (1994-11-01), Heideman et al.

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