Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-09-28
1994-07-26
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
307585, H01L 2702
Patent
active
053329163
ABSTRACT:
A transmission gate having a CMOS structure wherein an NMOS transistor and a PMOS transistor are connected in parallel between an input signal line and an output signal line and a separation layer which separates a transistor formation region for one of the PMOS transistor and the NMOS transistor formed in a substrate from the substrate, wherein the back gates of the respective transistors are constituted to receive an input signal from the input signal line when the one transistor and the other transistor formed in a well region are in a conductive state.
REFERENCES:
patent: 5146112 (1992-09-01), Ito et al.
patent: 5157282 (1992-10-01), Santin et al.
Carroll J.
Rohm & Co., Ltd.
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