Semiconductor memory apparatus

Details Semiconductor memory apparatus Semiconductor memory apparatus

1992-10-21

1994-07-26

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, 257326, H01L 2978, H01L 2994

Patent

active

053329155

ABSTRACT:
A high dielectric film instead of an oxidizing film conventionally used is used in the non-volatile memory of an MoNoS construction. Using a mixed film composed of a high dielectric constant film and an amorphous insulating film for the trap film, the ratio of the voltage applied to the tunnel oxidizing film is increased so that writing and erasing operations can be effected with a low voltage. Penetration of the electrons into the electrode and the flow of positive holes from the electrode are prevented so as to increase the flow efficiency.

REFERENCES:
patent: 3731163 (1973-05-01), Shuskus
patent: 4360900 (1982-11-01), Bate

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