Method for structuring a layer using a ring electrode and multip

Details Method for structuring a layer using a ring electrode and multip Method for structuring a layer using a ring electrode and multip

1992-09-30

1994-07-26

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, 20419225, 2041923, H01L 2100, H01L 21306, B44C 122, C03C 1500

Patent

active

053324684

ABSTRACT:
Method for structuring a layer. For structuring a layer that is arranged on a lower layer of a different material using a plasma etching process, a target (14) of the material of the lower layer is arranged in an etching reactor (1). The etching process is managed such that material is sputtered from the target (14) and is deposited on surfaces of the lower layer exposed in the etching process to essentially the same degree to which the lower layer is eroded by the etching process. The method is particularly suited for structuring a polysilicon layer that is arranged on a gate oxide layer.

REFERENCES:
patent: 4786359 (1988-11-01), Stark et al.
"Enhancement Of Selectivity In A Polysilicon Tride Etch Process Using Independent Bias Voltage Control In Conjunction With Br.sub.2 and Cl.sub.2 Plasmas" by S. Davis et al, 10440 Proceedings of the Electrochemical Society (1989) No. 9, New York, pp. 486-497.
"Triode Plasma Etching" by V. J. Minkiewicz et al, Applied Physics Ltrs. vol. 34, No. 1, Feb. 1, 1979, pp. 192-193.
"Extremely high selective, highly anisotropic, & high rate electron cyclotron resonance plasma etching for n+poly-Si at the electron cyclotron resonance position", by Seiji Samukawa, 1990, J. Vac. Sci. Technology B 8 (6), Nov./Dec. 1990, pp. 1192-1198.

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