Integrated circuit with improved protection against negative tra

Details Integrated circuit with improved protection against negative tra Integrated circuit with improved protection against negative tra

1991-09-16

1993-01-19

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

307150, 257369, 257544, H01L 2978

Patent

active

051810913

ABSTRACT:
A battery-backed integrated circuit, with a double diode structure connected to signal lines. In the double diode structure, a first junction is three-dimensionally enclosed by a second junction, so that minority carriers generated at the first junction will be collected at the second junction. Thus, when a negative transient voltage appears on the signal line, the first junction can be forward biassed to source the needed current from ground, with minimal minority carrier injection.

REFERENCES:
patent: 4400711 (1983-08-01), Avery
patent: 4486770 (1984-12-01), Woodward
patent: 4595941 (1986-06-01), Avery
patent: 4631567 (1986-12-01), Kokado et al.
patent: 4713555 (1987-12-01), Lee
patent: 4862310 (1989-08-01), Harrington, III
patent: 4980746 (1990-12-01), Harrington, III

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