Semiconductor device having mosfets formed in inherent and well

Details Semiconductor device having mosfets formed in inherent and well Semiconductor device having mosfets formed in inherent and well

1994-12-07

1996-08-13

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257285, 257398, 257400, H01L 2976, H01L 2980, H01L 2994

Patent

active

055459110

ABSTRACT:
A semiconductor device has an inherent region of the same conductivity type and the same impurity concentration as a semiconductor substrate and well regions located close to each other under a main surface of the semiconductor substrate. A field oxide film is selectively formed on the main surface. A MOSFET, termed an "undoped MOSFET," is formed in the inherent region. A carrier stop layer having a conductivity type opposite to, and an impurity concentration higher than, that of the inherent region is formed within the inherent region. The carrier stop layer extends from the bottom of the field oxide film and underlies the source/drain regions of the undoped MOSFET in spaced relationship therewith. The carrier stop layer prevents punch-through between the well region and densely diffused source/drain regions in the undoped MOSFET region, even when they are located close to each other. The present invention permits a higher density integration of elements or circuits in a semiconductor device to be achieved than is possible in the prior art.

REFERENCES:
patent: 4890147 (1989-12-01), Teng et al.
patent: 5365082 (1994-11-01), Gill et al.
patent: 5399895 (1995-03-01), Koga
patent: 5440165 (1995-08-01), Mitsunaga et al.

Affiliated with

Also associated with

Rating

Semiconductor device having mosfets formed in inherent and well does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having mosfets formed in inherent and well , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having mosfets formed in inherent and well will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1050044