Semiconductor memory element and method of fabricating the same

Details Semiconductor memory element and method of fabricating the same Semiconductor memory element and method of fabricating the same

1991-07-31

1993-06-15

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

365149, G11C 700

Patent

active

052205304

ABSTRACT:
In a gain-cell type semiconductor memory element having a first MOSFET and a second MOSFET, the sources of the first and second MOSFETs are connected to a bit line, the drain of the first MOSFET and the gate of the second MOSFET are connected to each other to serve as a charge storage region, the gate of the first MOSFET is connected to a write word line, the drain of the second MOSFET is connected to a power supply line, and the channel region of the second MOSFET is capacitively coupled via an insulating layer with a read word line thereby to receive substrate biasing by capacitive coupling from the read word line.

REFERENCES:
patent: 4970689 (1990-11-01), Kenney
patent: 5136533 (1992-08-01), Harari
patent: 5148393 (1992-09-01), Furuyama

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