Method and apparatus for controlling the diameter of a silicon s

Details Method and apparatus for controlling the diameter of a silicon s Method and apparatus for controlling the diameter of a silicon s

1992-08-26

1993-09-21

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156600, 1566171, 1566181, C30B 1526

Patent

active

052465357

ABSTRACT:
A method of controlling the diameter of a silicon single crystal. In the course of manufacturing a silicon single crystal by pulling the silicon single crystal while rotating it relative to a crucible, a comparison between a measured diameter value of the pulled single crystal measured by optical means and a desired diameter value is made to determine a deviation so that the resulting deviation is subjected to an incomplete differential PID processing or the Smith method processing to calculate a pull rate and the pull rate is applied to a motor controller of a crystal pulling apparatus thereby performing the diameter control of the pulled single crystal through the manipulation of the pull rate. An apparatus for controlling the diameter of a silicon single crystal includes input means for receiving a measured diameter value of a pulled single crystal measured by optical means, incomplete differential PID computing means for making a comparison between a measured diameter value of the pulled single crystal and a desired diameter value a plurality of times at intervals of a unit rotational period to calculate a pull rate, and output means for applying the pull rate to a motor controller of a crystal pulling apparatus.

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Hull, E. M. et al. "Monitoring Diameter of Semiconductor Crystals During Automated Growth", IBM Technical Disclosure Bulletin vol. 19, No. 3, Aug. 1976, pp. 869-870.
Moody, J. W. et al. "Developments in Czochralski Silicon Crystal Growth", Solid State Technology, vol. 26 (1983) Aug., No. 8, pp. 221-224.

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